Microsaic’s high frequency
switch prototypes demonstrate superior isolation and
insertion loss at frequencies from baseband up to Ka
and Ku band. Fabrication is compatible with existing
foundry capabilities.
Worst-case insertion loss is 0.6 dB.
Microsaic is in discussions with partners to commercialise
its low loss, high isolation switch technology.
Microsaic MEMS inductors use
an inexpensive, 5-layer wafer-scale process. Peak-process
temperature is less than 200°C making it suitable
for implementation on integrated circuits.
Q factor is 40 at 3 GHz.
Advantages include low sensitivity to acoustic noise
and vibration.
Microsaic has developed high
density, ultra-fine pitch electrical connectors using
MEMS technology. These connectors have more contacts
in a smaller footprint than today’s connectors
and incorporate self-alignment features for ease of
assembly.
Microsaic’s electrical
relays are smaller and consume less power than conventional
relays. The relays are more compact, have faster trip
times and lower sensitivity to ambient temperature than
today’s overcurrent protection devices. Prototypes
meet electrical overcurrent protection specifications.
