Microsaic’s
high frequency switch prototypes demonstrate superior
isolation and insertion loss at frequencies from baseband
up to Ka and Ku band. Fabrication is compatible with
existing foundry capabilities.
Worst-case insertion loss is 0.6 dB.
Microsaic is in discussions with partners to commercialise
its low loss, high isolation switch technology.
Microsaic
MEMS inductors use an inexpensive, 5-layer wafer-scale
process. Peak-process temperature is less than 200°C
making it suitable for implementation on integrated
circuits.
Q factor is 40 at 3 GHz.
Advantages include low sensitivity to acoustic noise
and vibration.
Microsaic
has developed high density, ultra-fine pitch electrical
connectors using MEMS technology. These connectors have
more contacts in a smaller footprint than today’s
connectors and incorporate self-alignment features for
ease of assembly.
Microsaic’s
electrical relays are smaller and consume less power
than conventional relays. The relays are more compact,
have faster trip times and lower sensitivity to ambient
temperature than today’s overcurrent protection
devices. Prototypes meet electrical overcurrent protection
specifications.
